Plasma-enhanced chemical vapor deposition (PECVD)

In plasma-enhanced chemical vapor deposition – or PECVD for short – plasma is used to support a chemical reaction. The advantage of this method is that lower temperatures between 200 °C and 500 °C can be used. This is particularly gentle on the substrate to which the coating is being applied.

With the direct plasma method, the plasma can be ignited directly next to the substrate. However, this process harbors the risk of damaging sensitive substrate materials – such as semiconductor wafers. This is why the remote plasma method is often used, in which the plasma is separated in spatial terms from the carrier material – a barrier protects the substrate from damage, and also enables the selective excitation of individual components of the process gas mixture. With this process, however, it is important to ensure that the chemical reaction only takes place when the activated particles reach the surface of the substrate.

These “low-temperature CVD” processes are often used when the substrate – e.g. plastic film – cannot withstand high temperatures. The semiconductor industry also relies on this method to avoid any structural changes in the semiconductor. PECVD technology can also be used to deposit a wide range of materials – such as amorphous silicon, silicon nitride or silicon oxide for microelectronics. FHR’s PECVD systems are customized and specially adapted to the respective process requirements. PECVD compartments are also frequently used to extend the technological range of sputtering systems. In any case, FHR delivers an impressive performance with its competitive prices and outstanding system quality.
 

Plasma-enhanced chemical vapor deposition (PECVD) offers numerous advantages:

1. Surface conformity: PECVD enables the deposition of coatings that closely match the substrate’s topology, which is particularly important for structured or uneven surfaces.
2. Low processing temperatures: By using plasma, PECVD can be performed at lower temperatures than with traditional CVD processes, which is particularly advantageous for temperature-sensitive substrates.
3. Versatility: PECVD can be used for a variety of materials, including dielectrics, semiconductors, and metals, making it a flexible tool for various applications.
4. High quality of the coatings: PECVD often produces dense, homogeneous, and pinhole-free coatings, which are crucial for many applications in the semiconductor industry and optics.
5. Intricate control over coating properties: Using PECVD, the properties of the deposited coatings – such as thickness, refractive index, and stress – can be precisely controlled by changing the process parameters.
6. Environmental friendliness: Many PECVD processes use fewer toxic and hazardous chemicals than other deposition processes, resulting in a smaller environmental footprint.