Plasma etching

Plasma etching (also known as “plasma-assisted ion etching”) is a process in which material is removed from a surface by the impact of high-energy gas ions. Another name for this method is “sputter etching”. This process is often used at FHR Anlagenbau GmbH. It can also be used to gently clean surfaces before further sputtering begins. This ensures optimum adhesion and quality with regard to subsequent coatings or finishes. The process, therefore, combines not only etching capabilities, but also essential preparatory steps for various applications.

In plasma etching, the material is mainly removed in the direction from which the ions strike. This process is particularly useful for materials that do not react easily with standard etching gases. One disadvantage, however, is that the material is only removed at a slow rate. In addition to this point, plasma etching removes most materials equally, and does not differentiate significantly between them, making it less selective.

Plasma etching offers several advantages:

1. Drying process: As plasma etching is a dry etching process, it eliminates the need for wet chemicals, thereby reducing the risk of contamination and chemical residues.
2. High level of precision and reproducibility: Plasma etching enables the precise structuring and definition of the finest patterns, making it particularly suitable for applications in the semiconductor industry and nano-technology.
3. Pre-cleaning of substrates: Before the actual material processing begins, plasma etching can be used to remove impurities and oxides from substrate surfaces, thus resulting in the enhanced quality and adhesion of subsequent coatings.
4. Versatility: By utilizing different process gases, plasma etching can be used to etch a variety of materials, making it suitable for a wide range of applications.

These properties make plasma etching a valuable tool in modern manufacturing and material processing.